Applicable in basic interconnect structures while integrating multiple process effects.
Exact matching of Cco-Cf modeling with correspondent devices’ SPICE model.
High precision parasitic RC extraction of device-level in matching with correspondent devices’ SPICE model.
Simulation of Cgc curve, in cross-verification with silicon data.
Easy-to-use GUI – GloryPolarisViewer for checking the correctness of structures.
Industry-leading precision-level and impressive performance efficiency.
Critical interconnect structures generated with automation.
Integration with SPEC and Design Rules.
Automated characterization of interconnect structures based on different process technology.
Automated partition for solving Poisson’s equation.
GloryPolaris
High-Precision 3D Modeling Tool for Parasitic Parameters
Overview
Based on Finite Difference Method, GloryPolaris calculates partial differential equations of Maxwell functions. GloryPolaris is applicable for mini-scope, very-high precision calculations such as RC extractions of general structures of the metal interconnect model. Because of its definitive nature, GloryPolaris provides results of highest precision – the Golden standard.
GloryPolaris provides parasitic extractions of highest precision for FinFET and Planar MOS. Given data including silicon data, pattern, rule, and profile from Foundry’s TD Department, GloryPolaris completes highest-precision 3D modeling. GloryPolaris takes into account of processing effects including BEOL, CMP, etch-loading, and TSV modeling. GloryPolaris can be applied in the exact calculation of device-level parasitic capacitances and in building up metal interconnect models.
Highlights
Products
GloryEXChip-Level RC Parasitic Extraction Tool
GloryEX3DDevice-Level High-Efficiency Parasitic Field Solver
GloryPolarisHigh-Precision 3D Modeling Tool for Parasitic Parameters
GloryBoltFull-Chip Power Grid/Signal Line EM/IR Signoff Tool
PhyBoltMulti-Physics Domain-Coupling Analysis for 3D IC and Chiplet
GloryWattFull-chip Power Signoff Tool
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