GloryEX3D®
GloryEX3D is a device-level, high-efficiency parasitic field solver—the device-level accuracy foundation of the τ-Aware ToolFramework. Based on the Random-Walk algorithm, it efficiently solves Maxwell's equations for parasitic extraction of complex 3D structures. It supports advanced process structures including FinFET, GAA, CFET, planar MOSFET, and nanosheet, with accuracy down to 0.1 nm.
Key Features
Standard-cell and SRAM characterization: Supports standard-cell and SRAM characterization and capacitance solving for critical paths.
Accurate critical-net capacitance extraction: Supports precise extraction of total capacitance (Total-Cap) and coupling capacitance (Coupling-Cap).
Multi-scale modeling: Supports multi-scale modeling from BEOL, Pcell, and standard cell up to SRAM arrays, enabling analysis and optimization at different hierarchy levels.
Advanced process structure support: Supports parasitic extraction for planar MOSFET, FinFET, nanosheet, and CFET processes, with accuracy down to 0.1nm.
Deep correlation with foundry golden data: Accuracy certified by multiple tier-1 foundries.
High parallelism and low memory:Low memory footprint with powerful parallel and hierarchical compute capabilities, scaling to thousands of CPU cores.
3D graphical viewer: Lisplays precisely modeled process data charts and 3D structures, with accurate characterization of conductor and dielectric parameters.
Tech file encryption: Supports tech file encryption to ensure foundry process-information
Products Highlights
Applications
Application Scenarios
High-accuracy RC extraction at the single-device, Pcell, standard-cell, and analog-block levels, as well as high-accuracy solving of chip critical paths—delivering signoff-level accuracy.